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  AO7408 20v n-channel mosfet general description product summary v ds i d (at v gs =10v) 2a r ds(on) (at v gs =4.5v) < 62m r ds(on) (at v gs =2.5v) < 75m r ds(on) (at v gs =1.8v) < 85m the AO7408 uses advanced trench technology to provi de excellent rds(on), low gate charge and operation wi th gate voltages as low as 1.8v. this device is suitab le for use as a load switch or in pwm applications. 20v g ds d d g d s d top view 1 2 3 6 5 4 sc-70-6 (sot-363) top view bottom view symbol v ds v gs i dm t j , t stg symbol t 10s steady-state steady-state r jl 0.35 maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 280 425 320 maximum junction-to-ambient a units a i d 2 1.5 16 t a =25c t a =70c pulsed drain current c continuous drain current v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted v 8 gate-source voltage drain-source voltage 20 parameter typ max c/w r ja 300 340 360 0.22 t a =70c junction and storage temperature range -55 to 150 c thermal characteristics power dissipation b p d t a =25c w pin 1 pin 1 rev 4: may 2015 www.aosmd.com page 1 of 5 downloaded from: http:///
symbol min typ max units bv dss 20 v v ds =20v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 0.4 0.7 1 v i d(on) 16 a 50 62 t j =125c 70 90 56 75 m 66 85 m g fs 15 s v sd 0.7 1 v i s 0.35 a c iss 260 320 pf c oss 48 pf c rss 27 pf r g 3 4.5 q g 2.9 4 nc q gs 0.4 nc q gd 0.6 nc t 2.5 ns reverse transfer capacitance v gs =0v, v ds =10v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage on state drain current i d =250 a, v gs =0v v gs =4.5v, v ds =5v v gs =4.5v, i d =2a forward transconductance diode forward voltage i s =1a,v gs =0v v ds =5v, i d =2a v gs =1.8v, i d =1a v gs =2.5v, i d =1.8a r ds(on) static drain-source on-resistance i dss a v ds =v gs i d =250 a v ds =0v, v gs =8v zero gate voltage drain current gate-body leakage current m gate resistance v gs =0v, v ds =0v, f=1mhz v gs =4.5v, v ds =10v, i d =2a gate source charge gate drain charge total gate charge maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters t d(on) 2.5 ns t r 3.2 ns t d(off) 21 ns t f 3 ns t rr 14 19 ns q rr 3.8 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. i f =2a, di/dt=100a/ s body diode reverse recovery time turn-off fall time body diode reverse recovery charge i f =2a, di/dt=100a/ s turn-on delaytime turn-on rise time turn-off delaytime v gs =10v, v ds =10v, r l =5 , r gen =3 a. the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user's spec ific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r ja is the sum of the thermal impedence from junction t o lead r jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. rev 4: may 2015 www.aosmd.com page 2 of 5 downloaded from: http:///
typical electrical and thermal characteristics 17 52 10 0 0 4 8 12 16 20 0 0.5 1 1.5 2 2.5 3 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 40 60 80 100 120 0 2 4 6 8 10 r ds(on) (m ) i d (a) 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature ( c) v gs =4.5v i d =2a v gs =2.5v i d =1.8a v gs =1.8v i d =1a 25 c 125 c v ds =5v v gs =1.8v v gs =4.5v 0 5 10 15 20 25 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =1.5v 2v 4.5v 2.5v v gs =2.5v 0 18 40 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 125 temperature ( c) figure 4: on-resistance vs. junction temperature (note e) 40 60 80 100 120 0 2 4 6 8 r ds(on) (m ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =2a 25 125 rev 4: may 2015 www.aosmd.com page 3 of 5 downloaded from: http:///
typical electrical and thermal characteristics 0 1 2 3 4 5 0 1 1 2 2 3 3 4 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 50 100 150 200 250 300 350 400 0 5 10 15 20 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =10v i d =2a 0.1 1 10 100 1000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v (volts) 10 s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 s 10ms pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impe dance (note f) single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse r ja =425 c/w rev 4: may 2015 www.aosmd.com page 4 of 5 downloaded from: http:///
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform d iode r ecovery t est c ircuit & w aveform s v ds + rr q = - idt - + v d c d u t v d d v g s v d s v g s r l r g v g s v d s 1 0 % 9 0 % r e s istive s w itch in g t e st c ircu it & w a v e fo rm s t t r d (o n ) t o n t d (o ff) t f t o ff ig v gs - + v d c d u t l v gs v ds isd isd v ds - v ds + i f di/dt i r m rr v d d v dd q = - idt t rr rev 4: may 2015 www.aosmd.com page 5 of 5 downloaded from: http:///


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